FCP11N60N
- Mfr.Part #
- FCP11N60N
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10.8A TO220-3
- Stock
- 4,823
- In Stock :
- 4,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 15 Weeks
- Weight :
- 1.8g
- Input Capacitance (Ciss) (Max) @ Vds :
- 1505pF @ 100V
- Current - Continuous Drain (Id) @ 25°C :
- 10.8A Tc
- Height :
- 15.9mm
- Published :
- 2004
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 42 ns
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Terminal Finish :
- Tin (Sn)
- Resistance :
- 380mOhm
- Gate to Source Voltage (Vgs) :
- 30V
- Qualification Status :
- Not Qualified
- Rise Time :
- 9.1ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 5.4A, 10V
- Width :
- 4.7mm
- Packaging :
- Tube
- Power Dissipation :
- 94W
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 13.6 ns
- ECCN Code :
- EAR99
- Length :
- 10.16mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 35.6nC @ 10V
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Series :
- SupreMOS™
- Continuous Drain Current (ID) :
- 10.8A
- Drain to Source Breakdown Voltage :
- 600V
- Threshold Voltage :
- 2V
- Fall Time (Typ) :
- 10 ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 94W Tc
- JESD-609 Code :
- e3
- Datasheets
- FCP11N60N

N-Channel Tube 299m Ω @ 5.4A, 10V ±30V 1505pF @ 100V 35.6nC @ 10V TO-220-3
FCP11N60N Description
The FCP11N60N SupreMOS? MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench-filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp on-resistance, superior switching performance and ruggedness.
FCP11N60N Features
-
RDS(on) = 255mΩ( Typ.) @ VGS = 10V, ID = 5.4A
-
Ultra-low gate charge ( Typ. Qg = 27.4nC )
-
Low effective output capacitance ( Typ. Coss.eff = 130pF )
-
100% avalanche tested
-
RoHS compliant
FCP11N60N Applications
-
General usage and suitable for many different applications
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