FCP104N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Rds On (Max) @ Id, Vgs :

104m Ω @ 18.5A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Turn On Delay Time :

34 ns

Height :

15.215mm

Avalanche Energy Rating (Eas) :

809 mJ

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

600V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Fall Time (Typ) :

21.4 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10.36mm

Turn-Off Delay Time :

102 ns

Width :

4.672mm

Factory Lead Time :

12 Weeks

Series :

HiPerFET™, Polar™

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Element Configuration :

Single

Package / Case :

TO-220-3

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

5V

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Input Capacitance (Ciss) (Max) @ Vds :

6130pF @ 25V

Mounting Type :

Through Hole

Packaging :

Tube

Transistor Application :

SWITCHING

Number of Pins :

3

Continuous Drain Current (ID) :

37A

Rise Time :

50ns

Number of Elements :

1

Power Dissipation-Max :

357W Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

Vgs (Max) :

±20V