FCP190N60E
- Mfr.Part #
- FCP190N60E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER MOSFET, N-CHANNEL, SUPERFE
- Stock
- 6,500
- In Stock :
- 6,500
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Length :
- 10.67mm
- Factory Lead Time :
- 14 Weeks
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Continuous Drain Current (ID) :
- 20.6A
- Threshold Voltage :
- 2.5V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 16.51mm
- Fall Time (Typ) :
- 15 ns
- Number of Pins :
- 3
- Weight :
- 1.8g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 20.6A Tc
- Series :
- SuperFET® II
- Input Capacitance (Ciss) (Max) @ Vds :
- 3175pF @ 25V
- Turn-Off Delay Time :
- 101 ns
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 10A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 208W
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Published :
- 2017
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Turn On Delay Time :
- 23 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Rise Time :
- 14ns
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.83mm
- Power Dissipation-Max :
- 208W Tc
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Datasheets
- FCP190N60E

N-Channel Tube 190m Ω @ 10A, 10V ±20V 3175pF @ 25V 82nC @ 10V 600V TO-220-3
FCP190N60E Description
FCP190N60E MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. With this technology, conduction loss is minimized while switching performance, dv/dt rate, and avalanche energy are all improved. As a result, the FCP190N60E MOSFET is ideal for switching power uses such PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCP190N60E Features
-
650V @TJ = 150°C
-
Max. RDS(on) = 190mΩ
-
Ultra low gate charge ( Typ. Qg = 63nC )
-
Low effective output capacitance ( Typ. Coss.eff = 178pF )
-
100% avalanche tested
FCP190N60E Applications
-
LCD/LED/PDP TV Lighting
-
Solar Inverter
-
AC-DC Power Supply
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