FCP190N60E

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Mfr.Part #
FCP190N60E
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
POWER MOSFET, N-CHANNEL, SUPERFE
Stock
6,500
In Stock :
6,500

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Package / Case :
TO-220-3
Packaging :
Tube
Length :
10.67mm
Factory Lead Time :
14 Weeks
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Continuous Drain Current (ID) :
20.6A
Threshold Voltage :
2.5V
Gate to Source Voltage (Vgs) :
20V
Drain to Source Voltage (Vdss) :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
16.51mm
Fall Time (Typ) :
15 ns
Number of Pins :
3
Weight :
1.8g
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
20.6A Tc
Series :
SuperFET® II
Input Capacitance (Ciss) (Max) @ Vds :
3175pF @ 25V
Turn-Off Delay Time :
101 ns
Rds On (Max) @ Id, Vgs :
190m Ω @ 10A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
208W
Number of Elements :
1
Mounting Type :
Through Hole
JESD-609 Code :
e3
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (Max) :
±20V
Pbfree Code :
yes
Published :
2017
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Turn On Delay Time :
23 ns
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Terminal Finish :
Tin (Sn)
Element Configuration :
Single
Rise Time :
14ns
Operating Temperature :
-55°C~150°C TJ
Width :
4.83mm
Power Dissipation-Max :
208W Tc
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Datasheets
FCP190N60E
Introducing Transistors - FETs, MOSFETs - Single onsemi FCP190N60E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, FCP190N60E pinout, FCP190N60E datasheet PDF, FCP190N60E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCP190N60E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCP190N60E


N-Channel Tube 190m Ω @ 10A, 10V ±20V 3175pF @ 25V 82nC @ 10V 600V TO-220-3

FCP190N60E Description

FCP190N60E MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. With this technology, conduction loss is minimized while switching performance, dv/dt rate, and avalanche energy are all improved. As a result, the FCP190N60E MOSFET is ideal for switching power uses such PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.


FCP190N60E Features

  • 650V @TJ = 150°C

  • Max. RDS(on) = 190mΩ

  • Ultra low gate charge ( Typ. Qg = 63nC )

  • Low effective output capacitance ( Typ. Coss.eff = 178pF )

  • 100% avalanche tested


FCP190N60E Applications

  • LCD/LED/PDP TV Lighting

  • Solar Inverter

  • AC-DC Power Supply


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