FCP190N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

16.51mm

Length :

10.67mm

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

10ns

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Vgs(th) (Max) @ Id :

3.5V @ 250µA

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

650V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Number of Terminations :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20.2A

Lead Free :

Lead Free

Vgs (Max) :

±20V

FET Type :

N-Channel

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Fall Time (Typ) :

5 ns

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

208W Tc

Series :

SuperFET® II

Pulsed Drain Current-Max (IDM) :

60.6A

Avalanche Energy Rating (Eas) :

400 mJ

Turn On Delay Time :

20 ns

ECCN Code :

EAR99

Mount :

Through Hole

Published :

2013

Packaging :

Tube

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Threshold Voltage :

2.5V

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

64 ns

Radiation Hardening :

No

Width :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

199m Ω @ 10A, 10V

Power Dissipation :

208W