FCP170N60
- Mfr.Part #
- FCP170N60
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO220-3
- Stock
- 9,643
- In Stock :
- 9,643
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 11A, 10V
- Continuous Drain Current (ID) :
- 22A
- Series :
- SuperFET® II
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Rise Time :
- 12ns
- Turn-Off Delay Time :
- 55 ns
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 525 mJ
- Weight :
- 1.8g
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Fall Time (Typ) :
- 3.8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Resistance :
- 170mOhm
- Power Dissipation-Max :
- 227W Tc
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 21 ns
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2860pF @ 380V
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 66A
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Factory Lead Time :
- 12 Weeks
- Datasheets
- FCP170N60

N-Channel Tube 170m Ω @ 11A, 10V ±20V 2860pF @ 380V 55nC @ 10V TO-220-3
FCP170N60 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 525 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2860pF @ 380V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.Peak drain current is 66A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FCP170N60 Features
the avalanche energy rating (Eas) is 525 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 66A.
FCP170N60 Applications
There are a lot of ON Semiconductor
FCP170N60 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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