FCP170N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

525 mJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Channels :

1

Pbfree Code :

yes

Rise Time :

12ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 380V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

227W Tc

Weight :

1.8g

Turn On Delay Time :

21 ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Terminal Finish :

Tin (Sn)

Resistance :

170mOhm

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Fall Time (Typ) :

3.8 ns

Continuous Drain Current (ID) :

22A

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Series :

SuperFET® II

Package / Case :

TO-220-3

Turn-Off Delay Time :

55 ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

66A

Rds On (Max) @ Id, Vgs :

170m Ω @ 11A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

22A Tc

ECCN Code :

EAR99

Number of Terminations :

3