FCP16N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Published :

2009

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

52.3nC @ 10V

Continuous Drain Current (ID) :

16A

Weight :

1.8g

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Power Dissipation :

134.4W

Input Capacitance (Ciss) (Max) @ Vds :

2170pF @ 100V

Lead Free :

Lead Free

Height :

9.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

16A Tc

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

199m Ω @ 8A, 10V

Turn-Off Delay Time :

60.3 ns

Power Dissipation-Max :

134.4W Tc

Transistor Application :

SWITCHING

Turn On Delay Time :

15.8 ns

JESD-609 Code :

e3

Resistance :

199mOhm

Series :

SupreMOS™

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

48A

Nominal Vgs :

2 V

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

20.2 ns

Drain to Source Breakdown Voltage :

600V

Mounting Type :

Through Hole

Number of Terminations :

3

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Length :

10.67mm

Width :

4.83mm

Threshold Voltage :

2V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Rise Time :

15.5ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Pbfree Code :

yes