FCP16N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

450 mJ

Power Dissipation :

167W

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V

Nominal Vgs :

5 V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.29.00.95

Turn On Delay Time :

42 ns

Turn-Off Delay Time :

165 ns

Published :

2005

Rise Time :

130ns

Gate to Source Voltage (Vgs) :

30V

Length :

10.1mm

Package / Case :

TO-220-3

Current Rating :

16A

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Fall Time (Typ) :

90 ns

Height :

9.4mm

REACH SVHC :

No SVHC

Element Configuration :

Single

Factory Lead Time :

43 Weeks

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.26Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

48A

Mount :

Through Hole

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Weight :

1.8g

Number of Pins :

3

Lead Free :

Lead Free

Termination :

Through Hole

Packaging :

Tube

Transistor Application :

SWITCHING

Dual Supply Voltage :

600V

Continuous Drain Current (ID) :

16A

Mounting Type :

Through Hole

FET Type :

N-Channel

Width :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

260m Ω @ 8A, 10V

Power Dissipation-Max :

167W Tc

Number of Elements :

1

Series :

SuperFET™

Voltage - Rated DC :

600V