FCP150N65F

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Mfr.Part #
FCP150N65F
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 650V 24A TO220-3
Stock
28,857
In Stock :
28,857

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
24A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3737pF @ 100V
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
73 ns
Height :
16.3mm
Fall Time (Typ) :
6 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
10.67mm
Rds On (Max) @ Id, Vgs :
150m Ω @ 12A, 10V
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
12 Weeks
Power Dissipation-Max :
298W Tc
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Turn On Delay Time :
28 ns
Rise Time :
15ns
Vgs(th) (Max) @ Id :
5V @ 2.4mA
FET Type :
N-Channel
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Number of Channels :
1
Width :
4.7mm
Terminal Finish :
Tin (Sn)
Series :
HiPerFET™, Polar™
Published :
2017
Pbfree Code :
yes
Packaging :
Tube
Drain to Source Breakdown Voltage :
650V
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
1.8g
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Package / Case :
TO-220-3
JESD-609 Code :
e3
Datasheets
FCP150N65F
Introducing Transistors - FETs, MOSFETs - Single onsemi FCP150N65F from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1, Package / Case:TO-220-3, FCP150N65F pinout, FCP150N65F datasheet PDF, FCP150N65F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCP150N65F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCP150N65F


N-Channel Tube 150m Ω @ 12A, 10V ±20V 3737pF @ 100V 93nC @ 10V TO-220-3

FCP150N65F Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3737pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 73 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.

FCP150N65F Features


a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 73 ns


FCP150N65F Applications


There are a lot of ON Semiconductor
FCP150N65F applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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