FCP150N65F
- Mfr.Part #
- FCP150N65F
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 24A TO220-3
- Stock
- 28,857
- In Stock :
- 28,857
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 24A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3737pF @ 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 73 ns
- Height :
- 16.3mm
- Fall Time (Typ) :
- 6 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 10.67mm
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 12A, 10V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 298W Tc
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Turn On Delay Time :
- 28 ns
- Rise Time :
- 15ns
- Vgs(th) (Max) @ Id :
- 5V @ 2.4mA
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Width :
- 4.7mm
- Terminal Finish :
- Tin (Sn)
- Series :
- HiPerFET™, Polar™
- Published :
- 2017
- Pbfree Code :
- yes
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 650V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.8g
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Datasheets
- FCP150N65F

N-Channel Tube 150m Ω @ 12A, 10V ±20V 3737pF @ 100V 93nC @ 10V TO-220-3
FCP150N65F Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3737pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 73 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
FCP150N65F Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 73 ns
FCP150N65F Applications
There are a lot of ON Semiconductor
FCP150N65F applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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