FCP13N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Length :

10.67mm

Radiation Hardening :

No

Continuous Drain Current (ID) :

13A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Rise Time :

10.6ns

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

600V

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Published :

2004

Turn On Delay Time :

14.5 ns

Vgs (Max) :

±30V

ECCN Code :

EAR99

Pbfree Code :

yes

Packaging :

Tube

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Power Dissipation :

116W

REACH SVHC :

No SVHC

Turn-Off Delay Time :

45 ns

Mount :

Through Hole

Series :

SupreMOS™

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

2V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

258m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1765pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

9.8 ns

Drain-source On Resistance-Max :

0.258Ohm

Width :

4.83mm

Gate Charge (Qg) (Max) @ Vgs :

39.5nC @ 10V

Height :

9.4mm

Weight :

1.8g

Power Dissipation-Max :

116W Tc

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single