FCP130N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Package / Case :

TO-220-3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

3

Mounting Type :

Through Hole

Resistance :

130mOhm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Weight :

1.8g

Series :

SuperFET® II

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

278W Tc

Fall Time (Typ) :

4 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Pbfree Code :

yes

Continuous Drain Current (ID) :

28A

Element Configuration :

Single

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3590pF @ 380V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

720 mJ

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Turn On Delay Time :

25 ns

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

84A

Rise Time :

16ns

Rds On (Max) @ Id, Vgs :

130m Ω @ 14A, 10V

Turn-Off Delay Time :

65 ns