FCP130N60
- Mfr.Part #
- FCP130N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 28A TO220-3
- Stock
- 9,694
- In Stock :
- 9,694
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Turn-Off Delay Time :
- 65 ns
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 14A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Continuous Drain Current (ID) :
- 28A
- Rise Time :
- 16ns
- Drain to Source Breakdown Voltage :
- 600V
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 278W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Pulsed Drain Current-Max (IDM) :
- 84A
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Pbfree Code :
- yes
- Resistance :
- 130mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3590pF @ 380V
- Turn On Delay Time :
- 25 ns
- Number of Channels :
- 1
- Weight :
- 1.8g
- Factory Lead Time :
- 12 Weeks
- Fall Time (Typ) :
- 4 ns
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 720 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- SuperFET® II
- Datasheets
- FCP130N60

N-Channel Tube 130m Ω @ 14A, 10V ±20V 3590pF @ 380V 70nC @ 10V TO-220-3
FCP130N60 Description
The SuperFET? II MOSFET family is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve exceptional low on-resistance and low gate charge performance. This cutting-edge technology is designed to reduce conduction loss, improve switching performance, and withstand increased avalanche energy and severe DV/DT rates. As a result, SuperFET II MOSFETs are ideal for a variety of AC/DC power conversion applications, allowing for system downsizing and increased efficiency.
FCP130N60 Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 112 mΩ
-
Ultra Low Gate Charge (Typ. Qg = 54 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
-
100% Avalanche Tested
-
RoHS Compliant
FCP130N60 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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