DTA123YU3T106

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.5

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 10mA 5V

Number of Terminations :

3

Terminal Position :

Dual

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Frequency - Transition :

250MHz

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

100mA

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Transition Frequency :

250MHz

Resistor - Base (R1) :

2.2 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SC-70, SOT-323

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

10 k Ω

Transistor Type :

PNP - Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Power - Max :

200mW

JESD-30 Code :

R-PDSO-G3

Factory Lead Time :

13 Weeks

Voltage - Collector Emitter Breakdown (Max) :

50V