DTA113TKAT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

1 k Ω

Max Breakdown Voltage :

50V

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

300mV

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Published :

2006

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Continuous Collector Current :

-100mA

Base Part Number :

DTA113

Emitter Base Voltage (VEBO) :

-5V

Number of Elements :

1

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Element Configuration :

Single

Power Dissipation :

200mW

Factory Lead Time :

9 Weeks

Terminal Position :

Dual

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

TIN SILVER COPPER

Transition Frequency :

250MHz

HTS Code :

8541.21.00.75

Transistor Type :

PNP - Pre-Biased

JESD-609 Code :

e1

Pbfree Code :

yes

Max Power Dissipation :

200mW

Current - Collector Cutoff (Max) :

500nA ICBO

Pin Count :

3

Number of Terminations :

3

Frequency - Transition :

250MHz

Max Collector Current :

100mA

hFE Min :

100

Terminal Form :

Gull wing

Current Rating :

-100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN BIAS RESISTOR

Time@Peak Reflow Temperature-Max (s) :

10

Voltage - Rated DC :

-50V

Polarity :

PNP

Transistor Application :

SWITCHING