DTA113ZKAT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Power Dissipation :

200mW

Lead Free :

Lead Free

Number of Pins :

3

Max Collector Current :

100mA

Number of Terminations :

3

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Pbfree Code :

yes

Base Part Number :

DTA113

Transistor Type :

PNP - Pre-Biased

Terminal Position :

Dual

REACH SVHC :

No SVHC

Element Configuration :

Single

Published :

1998

Resistor - Base (R1) :

1 k Ω

Continuous Collector Current :

-7.2mA

Resistor - Emitter Base (R2) :

10 k Ω

Voltage - Rated DC :

-50V

Current - Collector Cutoff (Max) :

500nA

Terminal Form :

Gull wing

Power Dissipation :

200mW

Pin Count :

3

Operating Supply Voltage :

50V

Transistor Application :

SWITCHING

Max Output Current :

100mA

Collector Emitter Voltage (VCEO) :

300mV

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Transition Frequency :

250MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 5mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75

Frequency - Transition :

250MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Breakdown Voltage :

50V

Current Rating :

-100mA

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

JESD-609 Code :

e1

hFE Min :

33