DTA123JEBTL
- Mfr.Part #
- DTA123JEBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 150MW EMT3F
- Stock
- 3,879
- In Stock :
- 3,879
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Max Power Dissipation :
- 150mW
- Number of Elements :
- 1
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Package / Case :
- SC-89, SOT-490
- ECCN Code :
- EAR99
- Resistor - Base (R1) :
- 2.2 k Ω
- Transition Frequency :
- 250MHz
- Published :
- 2013
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP - Pre-Biased
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 300mV
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Frequency - Transition :
- 250MHz
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 500nA
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- DTA123
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 50V
- Max Operating Temperature :
- 150°C
- Max Breakdown Voltage :
- 50V
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 21
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Factory Lead Time :
- 10 Weeks
- Datasheets
- DTA123JEBTL

DTA123JEBTL datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at
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