DTA115GUAT106

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Collector Current :

100mA

Lead Free :

Lead Free

JESD-609 Code :

e1

Number of Pins :

3

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Max Power Dissipation :

200mW

Min Operating Temperature :

-55°C

Max Breakdown Voltage :

50V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Published :

2004

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

ECCN Code :

EAR99

Factory Lead Time :

7 Weeks

Voltage - Rated DC :

-50V

Number of Terminations :

3

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Position :

Dual

DC Current Gain-Min (hFE) :

82

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

hFE Min :

82

Additional Feature :

BUILT-IN BIAS RESISTOR

Current Rating :

-100mA

Transition Frequency :

250MHz

Terminal Finish :

TIN SILVER COPPER

Element Configuration :

Single

Terminal Form :

Gull wing

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V