DSS5320T-7
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- Mfr.Part #
- DSS5320T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23-3
- Stock
- 8,460
- In Stock ：
- 8,460
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -3A
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -70mV
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- -20V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 20V
- Factory Lead Time :
- 15 Weeks
- Published :
- 2016
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Transition Frequency :
- 180MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 20V
- Power - Max :
- 600mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Additional Feature :
- High Reliability
- Collector Emitter Voltage (VCEO) :
- 300mV
- Terminal Position :
- Dual
- Max Power Dissipation :
- 600mW
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- Max Collector Current :
- 2A
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 180MHz
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Datasheets
- DSS5320T-7
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS5320T-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -70mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 300mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at -3A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 180MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
DSS5320T-7 Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of -70mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 180MHz
DSS5320T-7 Applications
There are a lot of Diodes Incorporated
DSS5320T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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