DSS5160V-7

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Mfr.Part #
DSS5160V-7
Manufacturer
Diodes Incorporated
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS PNP 60V 1A SOT563
Stock
5,039
In Stock :
5,039

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
150MHz
Pin Count :
6
Pbfree Code :
yes
Termination :
SMD/SMT
Vce Saturation (Max) @ Ib, Ic :
330mV @ 100mA, 1A
Number of Terminations :
6
Package / Case :
SOT-563, SOT-666
Collector Emitter Voltage (VCEO) :
60V
Mount :
Surface Mount
Emitter Base Voltage (VEBO) :
5V
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
80V
Terminal Finish :
Matte Tin (Sn)
Current - Collector Cutoff (Max) :
100nA
Number of Pins :
6
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
150MHz
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
100
Factory Lead Time :
12 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 500mA 5V
Height :
600μm
Width :
1.2mm
Weight :
3.005049mg
Lead Free :
Lead Free
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Max Power Dissipation :
600mW
Max Breakdown Voltage :
60V
Base Part Number :
DSS5160
Transistor Element Material :
SILICON
Element Configuration :
Single
Length :
1.6mm
Peak Reflow Temperature (Cel) :
260
Published :
2009
Radiation Hardening :
No
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Max Collector Current :
1A
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Frequency :
150MHz
Polarity/Channel Type :
PNP
Transistor Type :
PNP
Packaging :
Tape and Reel (TR)
Terminal Form :
Flat
Collector Emitter Breakdown Voltage :
60V
Power Dissipation :
600mW
Collector Emitter Saturation Voltage :
330mV
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS5160V-7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Package / Case:SOT-563, SOT-666, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Base Part Number:DSS5160, Mounting Type:Surface Mount, DSS5160V-7 pinout, DSS5160V-7 datasheet PDF, DSS5160V-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS5160V-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSS5160V-7


PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount

DSS5160V-7 Overview


This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 330mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.

DSS5160V-7 Features


the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


DSS5160V-7 Applications


There are a lot of Diodes Incorporated
DSS5160V-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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