DSS5160V-7
- Mfr.Part #
- DSS5160V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT563
- Stock
- 5,039
- In Stock :
- 5,039
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 330mV
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 150MHz
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 100
- Terminal Form :
- Flat
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Frequency :
- 150MHz
- Max Power Dissipation :
- 600mW
- Length :
- 1.6mm
- Transition Frequency :
- 150MHz
- Power Dissipation :
- 600mW
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 6
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 600μm
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 1.2mm
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Weight :
- 3.005049mg
- Termination :
- SMD/SMT
- Max Collector Current :
- 1A
- Base Part Number :
- DSS5160
- Package / Case :
- SOT-563, SOT-666
- Datasheets
- DSS5160V-7

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DSS5160V-7 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 330mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.
DSS5160V-7 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS5160V-7 Applications
There are a lot of Diodes Incorporated
DSS5160V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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