DSS5160U-7
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- Mfr.Part #
- DSS5160U-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT323
- Stock
- 1,958
- In Stock ：
- 1,958
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 400mW
- Polarity/Channel Type :
- PNP
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 1A
- Factory Lead Time :
- 15 Weeks
- Transition Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- DSS5160
- Package / Case :
- SC-70, SOT-323
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 1mm
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 150MHz
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2.15mm
- Termination :
- SMD/SMT
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 6.010099mg
- Max Power Dissipation :
- 400mW
- Collector Emitter Saturation Voltage :
- -340mV
- Width :
- 1.3mm
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Datasheets
- DSS5160U-7
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
DSS5160U-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 500mA 5V.The collector emitter saturation voltage is -340mV, which allows for maximum design flexibility.When VCE saturation is 340mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DSS5160U-7 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS5160U-7 Applications
There are a lot of Diodes Incorporated
DSS5160U-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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