DSS5240T-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

600mW

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.3mm

Emitter Base Voltage (VEBO) :

5V

Weight :

7.994566mg

Element Configuration :

Single

Number of Pins :

3

Max Collector Current :

2A

Collector Base Voltage (VCBO) :

40V

Number of Terminations :

3

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 1A 2V

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

-350mV

Contact Plating :

Tin

Transistor Element Material :

SILICON

Height :

1mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Termination :

SMD/SMT

JESD-609 Code :

e3

Transistor Type :

PNP

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

hFE Min :

300

Vce Saturation (Max) @ Ib, Ic :

350mV @ 200mA, 2A

Power Dissipation :

730mW

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Position :

Dual

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

40V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

40V

Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

100MHz

Pbfree Code :

yes

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

40V

Terminal Form :

Gull wing

Factory Lead Time :

15 Weeks

Mounting Type :

Surface Mount

Length :

2.9mm

Power - Max :

600mW

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

DSS5240

Gain Bandwidth Product :

100MHz

REACH SVHC :

No SVHC

Published :

2008