DSS5240T-7
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- Mfr.Part #
- DSS5240T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 7,752
- In Stock ：
- 7,752
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 40V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2008
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 1mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Weight :
- 7.994566mg
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Base Part Number :
- DSS5240
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Power Dissipation :
- 730mW
- Collector Emitter Saturation Voltage :
- -350mV
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 600mW
- Termination :
- SMD/SMT
- hFE Min :
- 300
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Width :
- 1.3mm
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Power - Max :
- 600mW
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Collector Base Voltage (VCBO) :
- 40V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 1A 2V
- Terminal Position :
- Dual
- Datasheets
- DSS5240T-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS5240T-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 2A volts.
DSS5240T-7 Features
the DC current gain for this device is 210 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS5240T-7 Applications
There are a lot of Diodes Incorporated
DSS5240T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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