DSS5240T-7
- Mfr.Part #
- DSS5240T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 7,752
- In Stock :
- 7,752
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 600mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.3mm
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Number of Pins :
- 3
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 40V
- Number of Terminations :
- 3
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 1A 2V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -350mV
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Height :
- 1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- hFE Min :
- 300
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Power Dissipation :
- 730mW
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Surface Mount
- Length :
- 2.9mm
- Power - Max :
- 600mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- DSS5240
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Published :
- 2008
- Datasheets
- DSS5240T-7
DSS5240T-7 Documents

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS5240T-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 2A volts.
DSS5240T-7 Features
the DC current gain for this device is 210 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS5240T-7 Applications
There are a lot of Diodes Incorporated
DSS5240T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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