DSS5240T-7
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- Mfr.Part #
- DSS5240T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 7,752
- In Stock ：
- 7,752
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 40V
- Factory Lead Time :
- 15 Weeks
- Height :
- 1mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- DSS5240
- Power - Max :
- 600mW
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Number of Pins :
- 3
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 730mW
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 1A 2V
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 40V
- Weight :
- 7.994566mg
- Max Collector Current :
- 2A
- Transition Frequency :
- 100MHz
- Width :
- 1.3mm
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -350mV
- Length :
- 2.9mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 600mW
- Polarity/Channel Type :
- PNP
- Published :
- 2008
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 300
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- DSS5240T-7
DSS5240T-7 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS5240T-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 2A volts.
DSS5240T-7 Features
the DC current gain for this device is 210 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS5240T-7 Applications
There are a lot of Diodes Incorporated
DSS5240T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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