DSS5240V-7
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- Mfr.Part #
- DSS5240V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 40V 1.8A SOT563
- Stock
- 55
- In Stock ：
- 55
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.8A
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- Height :
- 600μm
- Vce Saturation (Max) @ Ib, Ic :
- 530mV @ 200mA, 2A
- Base Part Number :
- DSS5240
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- -5V
- Pin Count :
- 6
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 300
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 6
- Package / Case :
- SOT-563, SOT-666
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 1.6mm
- Lead Free :
- Lead Free
- Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Published :
- 2009
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 3.005049mg
- Transition Frequency :
- 150MHz
- Width :
- 1.2mm
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 600mW
- Power Dissipation :
- 600mW
- Number of Pins :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -530mV
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Datasheets
- DSS5240V-7
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DSS5240V-7 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -530mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 530mV @ 200mA, 2A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 1.8A volts.
DSS5240V-7 Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -530mV
the vce saturation(Max) is 530mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
DSS5240V-7 Applications
There are a lot of Diodes Incorporated
DSS5240V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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