DSS5240TQ-7
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- Mfr.Part #
- DSS5240TQ-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 1,338
- In Stock ：
- 1,338
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reference Standard :
- AEC-Q101
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 1A 2V
- Max Collector Current :
- 2A
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 350mV
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency - Transition :
- 100MHz
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Max Power Dissipation :
- 730mW
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- Power - Max :
- 730mW
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Configuration :
- Single
- Transition Frequency :
- 100MHz
- Published :
- 2015
- Max Breakdown Voltage :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- DSS5240TQ-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS5240TQ-7 Overview
In this device, the DC current gain is 210 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 200mA, 2A.100MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
DSS5240TQ-7 Features
the DC current gain for this device is 210 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
a transition frequency of 100MHz
DSS5240TQ-7 Applications
There are a lot of Diodes Incorporated
DSS5240TQ-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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