DSS5160FDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-30 Code :

S-PDSO-N6

Mounting Type :

Surface Mount

Pbfree Code :

yes

Factory Lead Time :

16 Weeks

Transition Frequency :

65MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2016

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

60V

JESD-609 Code :

e4

Max Collector Current :

1A

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Package / Case :

6-UDFN Exposed Pad

Power - Max :

405mW

Max Power Dissipation :

405mW

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

550mV @ 50mA, 1A

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

Transistor Type :

2 PNP (Dual)

Collector Emitter Voltage (VCEO) :

550mV

Transistor Application :

SWITCHING

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS

Number of Elements :

2

Frequency - Transition :

65MHz

Max Breakdown Voltage :

60V