BSZ0909NDXTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate, 4.5V Drive

Drain-source On Resistance-Max :

0.025Ohm

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

S-PDSO-N8

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

4.1A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 10V

Number of Terminations :

8

Pbfree Code :

yes

Package / Case :

8-PowerVDFN

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 15V

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

2.6nC @ 4.5V

Configuration :

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

4 mJ

Factory Lead Time :

4 Weeks

Series :

OptiMOS™

JESD-609 Code :

e3

Published :

2013

Vgs(th) (Max) @ Id :

2V @ 250μA

Power - Max :

17W