BSZ018NE2LSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

25 ns

Number of Elements :

1

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation-Max :

2.1W Ta 69W Tc

Published :

2013

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

Pin Count :

8

JESD-30 Code :

S-PDSO-N3

Fall Time (Typ) :

3.6 ns

Max Dual Supply Voltage :

25V

Number of Pins :

8

Halogen Free :

Halogen Free

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

22A Ta 40A Tc

ECCN Code :

EAR99

Continuous Drain Current (ID) :

22A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Pbfree Code :

No

Mounting Type :

Surface Mount

Power Dissipation :

2.1W

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

5.2 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 20A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Number of Terminations :

3

Lead Free :

Contains Lead

Rise Time :

4.8ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0025Ohm

Package / Case :

8-PowerTDFN

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant