BSZ023N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

2630pF @ 20V

Mounting Type :

Surface Mount

JESD-30 Code :

S-PDSO-F3

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

40A

Number of Elements :

1

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.35m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

13 ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.1W Ta 69W Tc

Terminal Position :

Dual

Series :

OptiMOS™

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

160A

Current - Continuous Drain (Id) @ 25°C :

22A Ta 40A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Contact Plating :

Tin

Rise Time :

38ns

Turn-Off Delay Time :

42 ns

Pin Count :

8

Terminal Form :

Flat

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Published :

2012

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Additional Feature :

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Avalanche Energy Rating (Eas) :

130 mJ

Drain-source On Resistance-Max :

0.0032Ohm

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

22A

Case Connection :

DRAIN