BSZ028N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Mount :

Surface Mount

Power Dissipation-Max :

2.1W Ta 63W Tc

Drain Current-Max (Abs) (ID) :

21A

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

21A Ta 40A Tc

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-PowerTDFN

Halogen Free :

Halogen Free

Rise Time :

4ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

100 mJ

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

40V

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 20V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Continuous Drain Current (ID) :

40A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

JESD-30 Code :

S-PDSO-N3

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 20A, 10V

Number of Elements :

1

Published :

2012

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

160A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Terminal Position :

Dual