BSZ014NE2LS5IFATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Contact Plating :

Tin

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

16V

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

JESD-30 Code :

S-PDSO-N3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

31A Ta 40A Tc

Number of Pins :

8

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0021Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 12V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Position :

Dual

Lead Free :

Contains Lead

Drain Current-Max (Abs) (ID) :

31A

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

25V

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Pulsed Drain Current-Max (IDM) :

160A

FET Feature :

Schottky Diode (Body)

Vgs(th) (Max) @ Id :

2V @ 250μA

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

3ns

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Power Dissipation-Max :

2.1W Ta 69W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

40A

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

1.45m Ω @ 20A, 10V

Number of Elements :

1