BSZ019N03LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

2V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.1W Ta 69W Tc

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 15V

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Published :

2011

Number of Elements :

1

Factory Lead Time :

18 Weeks

Number of Pins :

8

DS Breakdown Voltage-Min :

30V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 20A, 10V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Pbfree Code :

No

JESD-609 Code :

e3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0025Ohm

Current - Continuous Drain (Id) @ 25°C :

22A Ta . 40A Tc

Contact Plating :

Tin

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

6.8ns

Continuous Drain Current (ID) :

22A

Number of Terminations :

3

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

OptiMOS™

Power Dissipation :

69W

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

S-PDSO-N3

Pin Count :

8