BSZ013NE2LS5IATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

S-PDSO-N3

Terminal Form :

NO LEAD

Pbfree Code :

yes

FET Type :

N-Channel

Number of Elements :

1

Number of Pins :

8

Published :

2013

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 20A, 10V

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

32A

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 12V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Vgs (Max) :

±16V

Power Dissipation-Max :

2.1W Ta 69W Tc

Avalanche Energy Rating (Eas) :

90 mJ

Drain-source On Resistance-Max :

0.0017Ohm

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

32A Ta 40A Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

160A

Max Dual Supply Voltage :

25V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-PowerTDFN

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Mount :

Surface Mount

Continuous Drain Current (ID) :

40A

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Terminal Position :

Dual