BSZ035N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Power Dissipation-Max :

2.1W Ta 69W Tc

Pbfree Code :

No

Fall Time (Typ) :

4.8 ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Power Dissipation :

2.1W

JESD-30 Code :

R-PDSO-C5

Threshold Voltage :

2V

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0043Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Terminations :

5

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 15V

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

18A Ta 40A Tc

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Turn On Delay Time :

10 ns

Series :

OptiMOS™

FET Type :

N-Channel

Terminal Form :

C BEND

Continuous Drain Current (ID) :

18A

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 10V

Rise Time :

5.8ns

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Terminal Position :

Dual

Pin Count :

8

DS Breakdown Voltage-Min :

30V

Number of Pins :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn-Off Delay Time :

38 ns

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE