BSZ018NE2LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Flat

Series :

OptiMOS™

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 30A, 10V

Continuous Drain Current (ID) :

23A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Terminal Position :

Dual

FET Type :

N-Channel

Contact Plating :

Tin

Power Dissipation :

2.1W

Package / Case :

8-PowerTDFN

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Power Dissipation-Max :

2.1W Ta 69W Tc

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Drain-source On Resistance-Max :

0.0024Ohm

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Threshold Voltage :

2V

JESD-30 Code :

S-PDSO-F3

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Number of Elements :

1

Mount :

Surface Mount

Pbfree Code :

No

Published :

2013

Additional Feature :

ULTRA LOW RESISTANCE

ECCN Code :

EAR99

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

23A Ta 40A Tc

Rise Time :

4.4ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Max Dual Supply Voltage :

25V

Packaging :

Tape and Reel (TR)