BSZ017NE2LS5IATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

160A

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

27A

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

JESD-30 Code :

S-PDSO-N3

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

25V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

8

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Terminal Form :

NO LEAD

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 20A, 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

27A Ta 40A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0023Ohm

Continuous Drain Current (ID) :

40A

Pbfree Code :

yes

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

40 mJ

Power Dissipation-Max :

2.1W Ta 50W Tc

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerTDFN