BSZ023N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.35m Ω @ 20A, 10V

Number of Elements :

1

Series :

OptiMOS™

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

S-PDSO-F3

Power Dissipation-Max :

2.1W Ta 69W Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Rise Time :

38ns

Drain-source On Resistance-Max :

0.0032Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2630pF @ 20V

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

130 mJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

8 ns

Additional Feature :

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Terminal Form :

Flat

Contact Plating :

Tin

Pbfree Code :

No

Drain Current-Max (Abs) (ID) :

22A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

13 ns

Package / Case :

8-PowerTDFN

Pulsed Drain Current-Max (IDM) :

160A

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Published :

2012

Pin Count :

8

Number of Pins :

8

Terminal Position :

Dual

Continuous Drain Current (ID) :

40A

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

22A Ta 40A Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Turn-Off Delay Time :

42 ns

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE