BSZ021N04LS6ATMA1
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- Mfr.Part #
- BSZ021N04LS6ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 25A/40A TSDSON
- Stock
- 12,418
- In Stock ：
- 12,418
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- OptiMOS™ 6
- Package / Case :
- 8-PowerTDFN
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 20V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Power Dissipation-Max :
- 2.5W Ta 83W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta 40A Tc
- Drain to Source Voltage (Vdss) :
- 40V
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 18 Weeks
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Datasheets
- BSZ021N04LS6ATMA1
N-Channel 2.1m Ω @ 20A, 10V ±20V 2700pF @ 20V 31nC @ 10V 40V 8-PowerTDFN
BSZ021N04LS6ATMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 20V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
BSZ021N04LS6ATMA1 Features
a 40V drain to source voltage (Vdss)
BSZ021N04LS6ATMA1 Applications
There are a lot of Infineon Technologies
BSZ021N04LS6ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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