BSZ028N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 20V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Power Dissipation-Max :

2.1W Ta 63W Tc

Continuous Drain Current (ID) :

40A

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

Number of Pins :

8

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

Rise Time :

4ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Package / Case :

8-PowerTDFN

Pulsed Drain Current-Max (IDM) :

160A

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

S-PDSO-N3

Factory Lead Time :

18 Weeks

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Max Dual Supply Voltage :

40V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

21A

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

21A Ta 40A Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

100 mJ

Transistor Element Material :

SILICON