BSZ014NE2LS5IFATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 12V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

160A

JESD-609 Code :

e3

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

31A

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Terminal Form :

NO LEAD

Halogen Free :

Halogen Free

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

3ns

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

31A Ta 40A Tc

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

40A

FET Feature :

Schottky Diode (Body)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

1.45m Ω @ 20A, 10V

Published :

2013

Case Connection :

DRAIN

Terminal Position :

Dual

FET Type :

N-Channel

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

25V

Factory Lead Time :

18 Weeks

Series :

OptiMOS™

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Pbfree Code :

yes

Power Dissipation-Max :

2.1W Ta 69W Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

S-PDSO-N3

Drain-source On Resistance-Max :

0.0021Ohm

Transistor Element Material :

SILICON