BSO203PNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.021Ohm

Continuous Drain Current (ID) :

8.2A

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.2A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Power - Max :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

20V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

OptiMOS™

Number of Terminations :

8

Avalanche Energy Rating (Eas) :

97 mJ

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

2242pF @ 15V

Drain to Source Voltage (Vdss) :

20V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

FET Type :

2 P-Channel (Dual)

Published :

2002

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Max Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Number of Pins :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

48.6nC @ 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 100μA

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE