BSO203SPNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Dual

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2265pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Terminations :

8

Continuous Drain Current (ID) :

9A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 100μA

Rds On (Max) @ Id, Vgs :

21m Ω @ 9A, 4.5V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

2.35W Ta

Published :

2002

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

50.4nC @ 4.5V

Avalanche Energy Rating (Eas) :

97 mJ

Series :

OptiMOS™

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.021Ohm

DS Breakdown Voltage-Min :

20V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

9A

Pulsed Drain Current-Max (IDM) :

36A

Number of Elements :

1

Transistor Element Material :

SILICON