BSO203SPHXUMA1
- Mfr.Part #
- BSO203SPHXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 7A 8DSO
- Stock
- 11,857
- In Stock :
- 11,857
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 18 Weeks
- FET Type :
- P-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 12V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Max Dual Supply Voltage :
- -20V
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Rds On (Max) @ Id, Vgs :
- 21m Ω @ 8.9A, 4.5V
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Pin Count :
- 8
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 7A
- Power Dissipation :
- 1.6W
- Published :
- 2010
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 4.5V
- Avalanche Energy Rating (Eas) :
- 97 mJ
- Vgs (Max) :
- ±12V
- Rise Time :
- 55ns
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 35.6A
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1.6W Ta
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Series :
- OptiMOS™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Vgs(th) (Max) @ Id :
- 1.2V @ 100μA
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3750pF @ 15V
- Datasheets
- BSO203SPHXUMA1

P-Channel Tape & Reel (TR) 21m Ω @ 8.9A, 4.5V ±12V 3750pF @ 15V 39nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
BSO203SPHXUMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 97 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3750pF @ 15V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.A maximum pulsed drain current of 35.6A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by -20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
BSO203SPHXUMA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 35.6A.
a 20V drain to source voltage (Vdss)
BSO203SPHXUMA1 Applications
There are a lot of Infineon Technologies
BSO203SPHXUMA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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