BSO200N03S
- Mfr.Part #
- BSO200N03S
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 7A 8DSO
- Stock
- 17,229
- In Stock :
- 17,229
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 7A
- JEDEC-95 Code :
- MS-012AA
- Drain Current-Max (Abs) (ID) :
- 7A
- Power Dissipation-Max :
- 1.56W Ta
- Fall Time (Typ) :
- 2.6 ns
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Published :
- 2006
- Feedback Cap-Max (Crss) :
- 46 pF
- Threshold Voltage :
- 1.6V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 7A
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Number of Terminations :
- 8
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 8.8A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Nominal Vgs :
- 1.6 V
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 1.56W
- Input Capacitance (Ciss) (Max) @ Vds :
- 840pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Termination :
- SMD/SMT
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Series :
- OptiMOS™
- Turn-Off Delay Time :
- 12 ns
- Pin Count :
- 8
- Rise Time :
- 2.6ns
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.5nC @ 5V
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Qualification Status :
- Not Qualified
- Resistance :
- 27mOhm
- Vgs(th) (Max) @ Id :
- 2V @ 10µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- BSO200N03S

N-Channel Tape & Reel (TR) 20m Ω @ 8.8A, 10V ±20V 840pF @ 15V 6.5nC @ 5V 8-SOIC (0.154, 3.90mm Width)
BSO200N03S Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 840pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.6V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
BSO200N03S Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
a threshold voltage of 1.6V
BSO200N03S Applications
There are a lot of Infineon Technologies
BSO200N03S applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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