BSO203P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Pin Count :

8

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

97 mJ

Polarity/Channel Type :

P-Channel

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

8.2A

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

32.8A

Number of Elements :

2

Number of Terminals :

8

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.021Ohm