BSL308PEH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

2A

FET Feature :

Logic Level Gate, 4.5V Drive

Drain-source On Resistance-Max :

0.08Ohm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Width :

1.6mm

Vgs(th) (Max) @ Id :

1V @ 11μA

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

15.3 ns

Transistor Element Material :

SILICON

Number of Terminations :

6

Max Power Dissipation :

500mW

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Height :

1mm

Turn On Delay Time :

5.6 ns

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

6

Lead Free :

Lead Free

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fall Time (Typ) :

2.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Continuous Drain Current (ID) :

2A

Drain to Source Voltage (Vdss) :

30V

Feedback Cap-Max (Crss) :

18 pF

Factory Lead Time :

10 Weeks

Series :

Automotive, AEC-Q101, OptiMOS™

Length :

2.9mm

Mount :

Surface Mount

Max Dual Supply Voltage :

-30V

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 10V

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

7.7ns