BSL307SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

44 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 40µA

Power Dissipation-Max :

2W Ta

Input Capacitance (Ciss) (Max) @ Vds :

805pF @ 25V

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.043Ohm

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Pbfree Code :

yes

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

5.5A

Number of Terminations :

6

HTS Code :

8541.29.00.95

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

43m Ω @ 5.5A, 10V

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G6

Transistor Application :

SWITCHING

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

22A

Transistor Element Material :

SILICON