BSL306NL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Number of Pins :

6

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.057Ohm

Number of Elements :

2

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Turn On Delay Time :

4.4 ns

Pin Count :

6

Radiation Hardening :

No

Max Power Dissipation :

500mW

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

1.6nC @ 5V

Series :

OptiMOS™

FET Type :

2 N-Channel (Dual)

Feedback Cap-Max (Crss) :

17 pF

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

2.3ns

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

1.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 11μA

Published :

2011

Rds On (Max) @ Id, Vgs :

57m Ω @ 2.3A, 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

2.3A

Terminal Form :

Gull wing

Package / Case :

SOT-23-6 Thin, TSOT-23-6

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

8.3 ns

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Base Part Number :

BSL306

Drain to Source Voltage (Vdss) :

30V