BSL303SPEH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 30μA

Additional Feature :

AVALANCHE RATED

Series :

OptiMOS™

JESD-30 Code :

R-PDSO-G6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.033Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Pulsed Drain Current-Max (IDM) :

25.2A

Power Dissipation-Max :

2W Ta

FET Type :

P-Channel

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

33m Ω @ 6.3A, 10V

Avalanche Energy Rating (Eas) :

30 mJ

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Lead Free :

Lead Free

Max Dual Supply Voltage :

-30V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1401pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

20.9nC @ 10V

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Published :

2013

Continuous Drain Current (ID) :

6.3A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount