BSL307SPL6327HTSA1
- Mfr.Part #
- BSL307SPL6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 5.5A TSOP-6
- Stock
- 43,782
- In Stock :
- 43,782
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Rise Time :
- 8.4ns
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 805pF @ 25V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Vgs(th) (Max) @ Id :
- 2V @ 40µA
- Drain-source On Resistance-Max :
- 0.043Ohm
- Pin Count :
- 6
- Power Dissipation :
- 2W
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Ta
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 2W Ta
- Mount :
- Surface Mount
- DS Breakdown Voltage-Min :
- 30V
- Number of Terminations :
- 6
- Avalanche Energy Rating (Eas) :
- 44 mJ
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Series :
- OptiMOS™
- Turn-Off Delay Time :
- 36.4 ns
- Turn On Delay Time :
- 7.3 ns
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 5.5A, 10V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 5.5A
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 22A
- Fall Time (Typ) :
- 29 ns
- Datasheets
- BSL307SPL6327HTSA1

P-Channel Tape & Reel (TR) 43m Ω @ 5.5A, 10V ±20V 805pF @ 25V 29nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
BSL307SPL6327HTSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 44 mJ.The maximum input capacitance of this device is 805pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5.5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 36.4 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 22A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
BSL307SPL6327HTSA1 Features
the avalanche energy rating (Eas) is 44 mJ
a continuous drain current (ID) of 5.5A
the turn-off delay time is 36.4 ns
based on its rated peak drain current 22A.
a 30V drain to source voltage (Vdss)
BSL307SPL6327HTSA1 Applications
There are a lot of Infineon Technologies
BSL307SPL6327HTSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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