BSC0921NDIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

ECCN Code :

EAR99

Number of Pins :

8

Series :

OptiMOS™

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Published :

2013

Max Power Dissipation :

1W

Continuous Drain Current (ID) :

31A

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Pbfree Code :

No

Mounting Type :

Surface Mount

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

17A 31A

FET Feature :

Logic Level Gate, 4.5V Drive

Vgs(th) (Max) @ Id :

2V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1025pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual) Asymmetrical