BSC0911NDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Number of Elements :

2

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PDSO-N6

Current - Continuous Drain (Id) @ 25°C :

18A 30A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1W

Radiation Hardening :

No

Series :

OptiMOS™

Rise Time :

5.4ns

Fall Time (Typ) :

4 ns

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Element Configuration :

Dual

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pbfree Code :

No

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Case Connection :

DRAIN SOURCE

Power Dissipation :

2.5W

Turn-Off Delay Time :

25 ns

Drain to Source Breakdown Voltage :

25V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

30A

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

18 Weeks

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 20A, 10V

FET Type :

2 N-Channel (Dual) Asymmetrical

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 12V

Packaging :

Cut Tape (CT)

FET Feature :

Logic Level Gate, 4.5V Drive